Company Filing History:
Years Active: 2022-2025
Title: Baolei Wu: Innovator in Semiconductor Technology
Introduction
Baolei Wu is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His innovative work focuses on enhancing semiconductor structures and storage cell designs.
Latest Patents
Wu's latest patents include a semiconductor structure that features two shielding layers and a manufacturing method for this structure. This method involves providing a substrate, forming a first shielding layer, and creating a first electrode that penetrates this layer. Additionally, a storage structure is formed on the first electrode, followed by the creation of a second shielding layer that integrates with the first. The process concludes with the formation of a second electrode that connects electrically to the storage structure.
Another notable patent is related to a storage cell and a data read/write method, which includes a bit line, a tunnel junction, and four access transistors. Each access transistor has an active region that includes a source, with all sources connected to one end of the tunnel junction. This innovative design enhances the efficiency and functionality of data storage systems.
Career Highlights
Baolei Wu is currently employed at Changxin Memory Technologies, Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced memory solutions that cater to the growing demands of the tech industry.
Collaborations
Wu collaborates with talented individuals such as Xiaoguang Wang and Yulei Wu, contributing to a dynamic team focused on innovation in semiconductor technology.
Conclusion
Baolei Wu's contributions to semiconductor technology through his patents and work at Changxin Memory Technologies, Inc. highlight his role as a key innovator in the field. His advancements are paving the way for future developments in data storage and semiconductor structures.