The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Nov. 20, 2020
Applicant:
Changxin Memory Technologies, Inc., Anhui, CN;
Inventors:
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Anhui, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01);
Abstract
A memory and a read and write method of memory can prevent the magnetic random-access memory (MRAM) from being easily damaged or degraded by excessive write current during use, and increase memory integration density. The memory includes: a storage unit, comprising a storage element; a source line, electrically connected to a first end of the storage element; the memory is configured to change a storage state of the storage element by a first current and a second current, the first current flowing through the storage element and the second current flowing through the source line without flowing through the storage element.