The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
Jan. 18, 2022
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Baolei Wu, Hefei, CN;
Xiaoguang Wang, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 27/24 (2006.01); H01L 27/11507 (2017.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 27/10808 (2013.01); H01L 27/11507 (2013.01); H01L 27/2436 (2013.01);
Abstract
A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The semiconductor structure includes a substrate; a first transistor, including a first channel region located in the substrate; a second transistor, including a second channel region located in the substrate, the second channel region having an area different from an area of the first channel region, and the first transistor and the second transistor having a common source or a common drain; and a memory cell, connected to the common source or the common drain.