Location History:
- Yongin, KR (2007 - 2009)
- Gyeonggi-do, KR (2010)
- Seongnam-si, KR (2008 - 2012)
Company Filing History:
Years Active: 2007-2012
Title: Bae-Hyoun Jung: Innovator in Semiconductor Technology
Introduction
Bae-Hyoun Jung is a prominent inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on innovative methods and devices that enhance the efficiency and effectiveness of semiconductor manufacturing.
Latest Patents
Among his latest patents is a novel exposure mask designed for semiconductor devices and thin film transistor array panels. This exposure mask features a light-blocking opaque area, a translucent area, and a transparent area that allows most incident light to pass through. The translucent area is particularly noteworthy as it generates phase differences ranging from about -70° to +70°. Another significant patent involves a cost-effective method for manufacturing thin film transistor (TFT) array panels. This method includes the formation of thin film transistors with gate, source, and drain electrodes, followed by the creation of insulating and conductive layers, and the use of photoresist layers for selective etching.
Career Highlights
Bae-Hyoun Jung is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics and semiconductor industry. His work at Samsung has allowed him to push the boundaries of semiconductor technology and contribute to advancements in the field.
Collaborations
Throughout his career, Bae-Hyoun Jung has collaborated with notable colleagues, including Jong-An Kim and Ji-Haeng Han. These collaborations have fostered innovation and have been instrumental in the development of his patented technologies.
Conclusion
Bae-Hyoun Jung is a key figure in the semiconductor industry, with a focus on innovative manufacturing methods and devices. His contributions, reflected in his patents, continue to influence the field and drive technological advancements.