Samsung Electronics Co., Ltd.

Bae-Hyoun Jung

Young-Bae Jung

Jong-An Kim

Ji-Haeng Han

Kun-Jong Lee

Hyun-Su Lim

Jong-Hwan Cha

Jae-Seong Byun

Sung-Wook Kim

Ho-Min Kang

Jae-seong Byun

Neung-Ho Cho

Yong-Kil Park

Dong-Yub Chae

Youn-Soo Choi

An exposure mask is provided, which includes: a light blocking opaque area blocking incident light; a translucent area; and a transparent area passing the most of incident light, wherein the translucent area generates the phase differences in the range of about &#x2212;70&#xb0; to about +70&#xb0;.

Mask and manufacturing method of a semiconductor device and a thin film transistor array panel using the mask

The present invention provides a method of manufacturing a TFT array panel in a cost-effective manner. The method includes: forming thin film transistors each having a gate electrode, a source electrode, and a drain electrode; forming an insulating layer on the thin film transistors; forming a first conductive layer electrically connected to the drain electrodes on the insulating layer; forming a second conductive layer on the first conductive layer; forming a photoresist layer including first portions and second portions thinner than the first portions; selectively etching the second conductive layer with a first etchant by using the photoresist layer as an etch blocker; and selectively etching the first conductive layer with a second etchant by using the photoresist layer and the second conductive layer as etch blockers.

Thin film transistor array panel and method of manufacturing the same

A manufacturing method for an array substrate, comprising forming a gate metal on a base substrate, patterning the gate metal to form a gate part having a gate electrode, a gate line and a gate pad. Then, a gate insulating layer, an active layer and a data metal are sequentially formed on the base substrate to cover the gate part. The data metal is patterned to form a data part having a data electrode, a data pad and a pixel electrode. Then, the exposed portion of the active layer is removed, and the exposed portion of the gate insulation layer is removed. When the data electrode is divided into a source electrode and a drain electrode, a switching device is completed.

Array substrate and display panel

The present invention relates to a TFT array panel and a fabricating method thereof. A gate insulating layer and a passivation layer are formed by printing organic insulating material in order to simplify the fabricating process. The inventive TFT panel includes an insulating substrate, and a gate wire formed on the insulating substrate. The gate wire includes a gate line and a gate pad connected to one end of the gate line. A gate insulating layer is formed on the insulating substrate while exposing the gate pad and a portion of the gate line close to the gate pad. A semiconductor pattern is formed on the gate insulating layer. A data wire is formed on the gate insulating layer. The data wire includes a data line, a source electrode connected to the data line, a drain electrode facing the source electrode and a data pad connected to one end of the data line. A passivation layer is formed on the gate insulating layer while exposing the data pad and a portion of the data line close to the data pad.

Thin film transistor array panel and method for fabricating the same

Growing community of inventors

Seongnam-si, South Korea

Bae-Hyoun Jung