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For the Inventor, By the Inventor

Tbilisi, Georgia

Avto Tavkhelidze

USPTO Granted Patents = 30

Average Co-Inventor Count = 2.1

ph-index = 10

Forward Citations = 361(Granted Patents)


Location History:

  • Tbilsi, GE (2000 - 2001)
  • Tbilisi, GA (US) (2002 - 2007)
  • Tbilisi, GE (2003 - 2015)

Company Filing History:

goldMedal28 out of 181 
 
Borealis Technical Limited
 patents
silverMedal1 out of 1 
 
Boreaiis Technical Limited
 patent
bronzeMedal1 out of 832,718 
Other
 patents

Years Active: 2000-2015

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30 patents (USPTO):Explore Patents
1. 9105669 - MOS transistor on the basis of quantum interferance effect (2015-08-11),
2. 8575597 - Liquid metal contact as possible element for thermotunneling (2013-11-05),
3. 8574663 - Surface pairs (2013-11-05),
4. 8330192 - Method for modification of built in potential of diodes (2012-12-11),
5. 8227885 - Selective light absorbing semiconductor surface (2012-07-24),
6. 7935954 - Artificial band gap (2011-05-03),
7. 7893422 - Transistor on the basis of new quantum interference effect (2011-02-22),
8. 7658772 - Process for making electrode pairs (2010-02-09),
9. 7651875 - Catalysts (2010-01-26),
10. 7642467 - Method for fabrication of separators for electrode pairs in diodes (2010-01-05),
11. 7566897 - Quantum interference device (2009-07-28),
12. 7351996 - Method of increasing efficiency of thermotunnel devices (2008-04-01),
13. 7323709 - Method for increasing efficiency of thermotunnel devices (2008-01-29),
14. 7253549 - Thermionic vacuum diode device with adjustable electrodes (2007-08-07),
15. 7220984 - Influence of surface geometry on metal properties (2007-05-22),

Title: The Visionary Innovations of Avto Tavkhelidze

Introduction: Avto Tavkhelidze, a renowned inventor based in Tbilisi, Georgia, has left an indelible mark on the world of technology with his relentless pursuit of innovation.

Latest Patents: With an impressive portfolio of 30 patents, his latest inventions include the groundbreaking MOS transistor based on the Quantum Interference Depression (QID) effect. This new type of Metal Oxide Semiconductor transistor features a gate voltage modulated potential energy barrier, allowing precise control of current flow. Additionally, Tavkhelidze's surface pairs method revolutionizes electrode pair fabrication, enhancing efficiency and performance in electronic devices.

Career Highlights: Throughout his career, Avto Tavkhelidze has contributed significantly to companies like Borealis Technical Limited, where his inventive spirit thrived. His passion for pushing boundaries and exploring the frontiers of technology has garnered him recognition as a pioneering force in the industry.

Collaborations: Tavkhelidze's innovative journey has been enriched by collaborations with esteemed colleagues such as Stuart Harbron and Isaiah Watas Cox. Together, they have synergized their expertise to drive forward groundbreaking projects and push the limits of technological innovation.

Conclusion: Avto Tavkhelidze emerges as a visionary inventor whose dedication to advancing technology knows no bounds. His remarkable inventions and collaborations stand as a testament to his unwavering commitment to shaping the future of innovation.

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