The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Oct. 31, 2007
Avto Tavkhelidze, Tbilisi, GE;
Leri Tsakadze, Tbilisi, GE;
Zaza Taliashvili, Tbilisi, GE;
Larissa Jangidze, Tbilisi, GE;
Rodney Thomas Cox, North Plains, OR (US);
Avto Tavkhelidze, Tbilisi, GE;
Leri Tsakadze, Tbilisi, GE;
Zaza Taliashvili, Tbilisi, GE;
Larissa Jangidze, Tbilisi, GE;
Rodney Thomas Cox, North Plains, OR (US);
Borealis Technical Limited, , GI;
Abstract
The use of liquid metal contacts for devices based on thermotunneling has been investigated. Electric and thermal characteristics of low wetting contact Hg/Si, and high wetting contacts Hg/Cu were determined and compared. Tunneling I-V characteristics for Hg/Si were obtained, while for Hg/Cu, I-V characteristics were ohmic. The tunneling I-V characteristic is explained by the presence of a nanogap between the contact materials. Heat conductance of high wetting and low wetting contacts were compared, using calorimeter measurements. Heat conductance of high wetting contact was 3-4 times more than of low wetting contact. Both electric and thermal characteristics of liquid metal contact indicated that it could be used for thermotunneling devices. To reduce the work function and make liquid metal more suitable for room temperature cooling, Cs was dissolved in liquid Hg. Work function as low as 2.6 eV was obtained.