Location History:
- Kodaira, JP (1993 - 2000)
- Tachikawa, JP (2000 - 2003)
Company Filing History:
Years Active: 1993-2003
Title: The Innovative Contributions of Atushi Ogishima
Introduction
Atushi Ogishima is a prominent inventor based in Kodaira, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on methods for fabricating semiconductor integrated circuit devices, which are crucial for modern electronics.
Latest Patents
One of his latest patents is a method of fabricating a semiconductor integrated circuit device for connecting semiconductor regions and electrical wiring metal via a titanium silicide layer. This method involves forming an insulating film on a silicon substrate, creating a contact hole, and depositing a titanium film that reacts with the silicon substrate. The titanium film undergoes a silicide reaction, with a preferred thickness range of 8 nm to 34 nm. Another notable patent describes a semiconductor device that includes a silicon substrate, electrical wiring metal, and a titanium silicide film formed in contact holes. The thickness of this titanium silicide film ranges from 20 nm to 84 nm, facilitating connections between semiconductor regions and electrical wiring.
Career Highlights
Atushi Ogishima is currently employed at Hitachi, Ltd., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of integrated circuits, which are essential for various electronic applications.
Collaborations
He has collaborated with notable coworkers, including Hiroyuki Uchiyama and Naokatsu Suwanai, contributing to the development of cutting-edge semiconductor technologies.
Conclusion
Atushi Ogishima's contributions to semiconductor technology through his innovative patents have significantly impacted the industry. His work at Hitachi, Ltd. exemplifies the importance of collaboration and innovation in advancing technology.