The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2001
Filed:
Feb. 08, 2000
Hiromi Todorobaru, Kashiwa, JP;
Hideo Miura, Koshigaya, JP;
Masayuki Suzuki, Kokubunji, JP;
Shinji Nishihara, Koganei, JP;
Shuji Ikeda, Koganei, JP;
Masashi Sahara, Kodaira, JP;
Shinichi Ishida, Higashimurayama, JP;
Hiromi Abe, Tokyo, JP;
Atushi Ogishima, Tachikawa, JP;
Hiroyuki Uchiyama, Higashimurayama, JP;
Sonoko Abe, Higashimurayama, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device comprises a silicon substrate, an electrical wiring metal, an insulating film formed on the silicon substrate, a plurality of contact holes formed in the insulating film for connecting the silicon substrate and the electrical wiring metal to each other, and a titanium silicide film formed in the contact holes. The thickness of the titanium silicide film is 10 nm to 120 nm or, preferably, 20 nm to 84 nm. Semiconductor regions and the electrical wiring metal are connected to each other through the titanium silicide film.