Kitaibaraki, Japan

Atsutoshi Arakawa

This inventor holds 9 USPTO granted patents. Top assignees: Nippon Mining & Metals Co., Ltd., Japan Energy Corporation, Nikko Materials Company, Limited. Active years: 2004-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Atsutoshi Arakawa. Retrieved from https://idiyas.com/inventor/atsutoshi-arakawa-vmoo5xn3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 44.4

Average Co-Inventor Count = 3.5

ph-index = 2

Forward Citations = 83(Granted Patents)


Location History:

  • Toda, JP (2004)
  • Atsutoshi, JP (2007)
  • Kitaibaraki, JP (2006 - 2010)

Company Filing History:


Years Active: 2004-2010

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9 patents (USPTO):Explore Patents

Title: Atsutoshi Arakawa: Innovator in Semiconductor Technology

Introduction

Atsutoshi Arakawa is a prominent inventor based in Kitaibaraki, Japan, known for his significant contributions to the field of semiconductor technology. With a total of nine patents to his name, he has made remarkable advancements in the production of compound semiconductor materials.

Latest Patents

One of his latest patents is titled "Method of co-doping group 14 (4B) elements to produce ZnTe system compound semiconductor single crystal." This invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal that exhibits high carrier concentration and low resistivity. The process involves co-doping a first and a second dopant into the ZnTe system compound semiconductor single crystal, where the second dopant's atom count is less than that of the first. This innovative approach allows for achieving a desired carrier concentration with a smaller doping amount than previous technologies, thereby improving the crystallinity of the resulting crystal.

Another notable patent is also focused on the "Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device." This patent shares similar objectives and methodologies as the previous one, emphasizing the importance of dopant control in enhancing semiconductor properties.

Career Highlights

Atsutoshi Arakawa has worked with notable companies such as Nippon Mining & Metals Co., Ltd. and Japan Energy Corporation. His experience in these organizations has contributed to his expertise in semiconductor research and development.

Collaborations

Throughout his career, Arakawa has collaborated with esteemed colleagues, including Kenji Sato and Toshiaki Asahi. These partnerships have fostered innovation and advancement in semiconductor technologies.

Conclusion

Atsutoshi Arakawa's work in semiconductor technology, particularly in the development of ZnTe system compound semiconductors, showcases his innovative spirit and dedication to enhancing material properties. His contributions continue to influence the field and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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