Nippon Mining & Metals Co., Ltd.

Japan Energy Corporation

Nikko Materials Company, Limited

Atsutoshi Arakawa

Kenji Sato

Toshiaki Asahi

Tetsuya Yamamoto

Ryuichi Hirano

Takayuki Yabe

Mikio Hanafusa

Akira Noda

The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

Method of co-doping group 14 (4B) elements to produce ZnTe system compound semiconductor single crystal

Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device

It is to define the resistivity and the contained amount of impurities of a CdTe system compound semiconductor single crystal and to provide a CdTe system compound semiconductor single crystal which is useful as a substrate for optical devices such as an infrared sensor and the like. In a CdTe system compound semiconductor single crystal for an optical device, a Group 1 (1A) element is included in a range of 5&#xd7;10to 6&#xd7;10cmin the crystal, a total amount of a Group 13 (3B) element and a Group 17 (7B) element included in the crystal is less than 2&#xd7;10cmand less than a total amount of the Group 1 (1A) element, and resistivity of the crystal is in a range of 10 to 104 &#x3a9;cm.

CdTe system compound semiconductor single crystal

Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device

A method for producing a compound semiconductor single crystal by a liquid encapsulated Czochralski method, including containing a semiconductor raw material and an encapsulating material in a raw material melt-containing portion having a first crucible having a bottom and a cylindrical shape and a second crucible disposed within the first crucible and having a communication hole communicating with the first crucible in a bottom portion thereof; melting the raw material by heating the raw material melt-containing portion; and growing a crystal by making a seed crystal contact with a surface of the raw material melt in a state covered with the encapsulating material and by pulling up the seed crystal. A heater temperature is controlled so that a diameter of a growing crystal becomes approximately equal to an inner diameter of the second crucible, and the crystal is grown by maintaining a surface of the growing crystal in a state covered with the encapsulating material until termination of crystal growth.

Production method for compound semiconductor single crystal

In a production method for producing a compound semiconductor single crystal by LEC method using a crystal growth apparatus with a double crucible structure, it was made to grow up a crystal by covering the second crucible with a plate-like member having a pass-through slot for being capable of introducing a crystal pulling-up shaft having a seed crystal holding part at a tip into the second crucible and creating a state where an atmosphere within the second crucible scarcely changes (a semi-sealed structure).

Process for producing single crystal of compound semiconductor and crystal growing apparatus

An electro luminescence device comprises a compound semiconductor crystal substrate comprising a Group 12 (2B) element and a Group 16 (6B) element in a periodic table. It is produced by providing a substrate having a low dislocation density or a low inclusion density; forming a pn junction by thermally diffusing an element converting the substrate of a first conduction type into the one of a second conduction type from a front surface of the substrate; and forming electrodes on front and rear of the substrate. A diffusion source including an element converting the substrate of a first conduction type into the one of a second conduction type is disposed on the front surface of the substrate, preventing forming of a defect compensating an impurity level which is formed in the substrate by the element during a diffusion process, and gettering impurity on the front surface of the substrate by the diffusion source. Thereby, the conduction type of the Group II-VI compound semiconductor can be controlled and the electro luminescence device having superior light emission characteristics can be stably produced.

Growing community of inventors

Kitaibaraki, Japan

Atsutoshi Arakawa