IDiyas

For the Inventor, By the Inventor

Tokyo, Japan

Atsushi Kanda

USPTO Granted Patents = 16


 

Average Co-Inventor Count = 2.2

ph-index = 3

Forward Citations = 164(Granted Patents)


Location History:

  • Suwa, JP (2003 - 2005)
  • Sakata, JP (2004 - 2007)
  • Kanagawa, JP (2007 - 2009)
  • Fujimi, JP (2014)
  • Tokyo, JP (2004 - 2023)
  • Chofu, JP (2019 - 2024)

Company Filing History:

goldMedal7 out of 33,404 
 
Seiko Epson Corporation
 patents
silverMedal5 out of 5,289 
 
Nippon Telegraph and Telephone Corporation
 patents
bronzeMedal3 out of 236 
 
Japan Aerospace Exploration Agency
 patents
4. 1 out of 3,609 
 
Airbus Operations Gmbh
 patents
5. 1 out of 1 
 
Sentencia Corporation
 patent
6. 1 out of 1 
 
Mitsubishi Electric Software Corporation
 patent
where one patent can have more than one assignee

Years Active: 2003-2025

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16 patents (USPTO):Explore Patents
1. 12425105 - Optical burst transmitter (2025-09-23),
2. 12243862 - Optical receiving circuit (2025-03-04),
3. 12000780 - Information processing system, information processing device, information processing method, and program (2024-06-04),
4. 11635373 - Information processing apparatus, information processing method, program, and monitoring system (2023-04-25),
5. 11264519 - Light-receiving element and method for manufacturing element (2022-03-01),
6. 10365206 - Surface condition monitoring apparatus (2019-07-30),
7. 10144126 - Robot system and method of operating a robot system (2018-12-04),
8. 8714707 - Method of making hole in substrate, substrate, nozzle plate and ink jet head (2014-05-06),
9. 7511539 - Driver circuit (2009-03-31),
10. 7285863 - Pad structures including insulating layers having a tapered surface (2007-10-23),
11. 7187227 - Driver circuit (2007-03-06),
12. 6916714 - METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, IN WHICH A HIGH-BREAKDOWN-VOLTAGE MOS TRANSISTOR AND A LOW-BREAKDOWN-VOLTAGE MOS TRANSISTOR ARE FORMED ON AN IDENTICAL SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY (2005-07-12),
13. 6818539 - Semiconductor devices and methods of fabricating the same (2004-11-16),
14. 6780701 - Method for manufacturing high-breakdown voltage transistor and low-breakdown voltage transistor on the same substrate (2004-08-24),
15. 6720222 - Method of manufacturing semiconductor device (2004-04-13),

Title: Atsushi Kanda - Pioneering Inventor from Tokyo, JP

Introduction: Atsushi Kanda is a renowned inventor hailing from Tokyo, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Atsushi Kanda holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Atsushi Kanda has worked with leading research institutions and tech companies, consistently pushing the boundaries of what is possible in the realm of technological advancements.

Collaborations: Throughout his career, Atsushi Kanda has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and creativity in all his projects.

Conclusion: Atsushi Kanda's passion for innovation and his relentless drive to create a better future through his inventions make him a true visionary in the world of technology.

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