Seiko Epson Corporation

Nippon Telegraph and Telephone Corporation

Japan Aerospace Exploration Agency

Airbus Operations Gmbh

Sentencia Corporation

Mitsubishi Electric Software Corporation

Atsushi Kanda

Yasushi Haga

Toshihide Yoshimatsu

Yasuhiko Nakanishi

Yohtaro Umeda

Robert Alexander Goehlich

Junichi Takeuchi

Kazuki Hashimoto

Yoshifumi Muramoto

Masahiro Nada

Shigeru Kanazawa

Yoshiho Maeda

Fumito Nakajima

Kimikazu Sano

Ingo Krohne

Yuichiro Aoki

Yoshiyasu Hirano

Yutaka Iwahori

Kazutaka Tateyama

Ippei Uchikata

Tomotaka Yamamoto

Yasuhiro Harada

Yuji Satoh

Hirokazu Ohmae

Toshiko Miyake

A highly efficient optical burst transmitter is provided. An embodiment is an optical burst transmitter including a control circuit configured to output a data signal and a burst control signal and a semiconductor optical amplifier configured to output an optical data signal modulated using the data signal as an optical burst data signal controlled using the burst control signal, the optical burst transmitter including: an electric line configured to connect the control circuit and the semiconductor optical amplifier and transmit the burst control signal; and an impedance matching circuit configured to impedance-match a characteristic impedance of the electric line and the semiconductor optical amplifier with each other.

Optical burst transmitter

In an optical receiver circuit which suppresses an unnecessary increase in impedance and occurrences of resonance and radiation noise and which produces preferable high-frequency transmission characteristics, a PD submount mounted with a PD chip and a chip capacitor and a TIA carrier mounted with a TIA chip are electrically connected to each other by a bonding wire. The chip includes an anode electrode pad and a cathode electrode pad, anode electrode-side ground pads are formed at positions that sandwich the pad, and cathode electrode-side ground pads are formed at positions that sandwich the pad. A wire electrically connects the pad and a signal pad for input of the chip to each other, a wire electrically connects the pad and the capacitor to each other, and a wire electrically connects the pads and the pads to each other.

Optical receiving circuit

An information processing system includes an irradiation unit configured to irradiate a deposited material with electromagnetic waves, a detection unit configured to detect scattered waves or transmitted waves of the electromagnetic waves with which the deposited material has been irradiated by the irradiation unit, and a determination unit configured to determine a state of the deposited material from an image based on the scattered waves or the transmitted waves detected by the detection unit.

Information processing system, information processing device, information processing method, and program

It is desirable to provide an information processing apparatus, an information processing method, a program, and a monitoring system capable of monitoring a condition of a measured surface highly accurately and using the monitoring result effectively. To attain the aforementioned object, according to a mode of the present invention, an information processing apparatus includes an obtaining module and a generating module. The obtaining module obtains measuring data about a measured surface. The generating module generates covering material information about a covering material that covers the measured surface based on a feature of the obtained measuring data.

Information processing apparatus, information processing method, program, and monitoring system

A light receiving element includes a first substrate, a photodiode formed on a main surface of the first substrate, and a second substrate constituted by a semiconductor and adhered to a rear surface side of the first substrate by an adhesive layer formed from a resin adhesive. A light receiving element according to an embodiment includes a lens that is formed on the side of an adhesion surface of the second substrate, has a convex surface, and is disposed in a light receiving region of the photodiode. The light receiving side of the photodiode is oriented toward the side of the first substrate. The lens is disposed so that the convex surface thereof is oriented toward the side of a light receiving surface of the photodiode.

Light-receiving element and method for manufacturing element

Provided is a surface condition monitoring apparatus including: a transparent member; a transmission unit including a transmitter that transmits electromagnetic waves from one side of the transparent member toward the other side; and a reception unit including a receiver that detects the electromagnetic waves that enter the one side of the transparent member from the other side, the transmission unit and the reception unit being arranged such that the receiver detects scattered waves of the electromagnetic waves transmitted from the transmitter, that enter the one side from the other side, the transmission unit being configured to be capable of transmitting a plurality of electromagnetic waves having different wavelengths, and the reception unit being configured to detect intensities of the scattered waves of the electromagnetic waves at different positions.

Surface condition monitoring apparatus

A robot system for carrying out a plurality of operations during assembly or maintenance of an aircraft or spacecraft includes a first robot having a base portion, a movable robot arm having a first coupling portion, and a first control means for controlling the robot arm, a plurality of second robots having movement means, a drive portion operable to drive the movement means, a tool portion having a tool for carrying out a specific one of the operations, a second coupling portion adapted to be selectively and releasably coupled with the first coupling portion in a predetermined positional relationship, and a second control means for controlling the respective second robot. The first and second control means are adapted to control the drive portion of one of the second robots and the robot arm to couple the first coupling portion and the respective second coupling portion in the predetermined positional relationship.

Robot system and method of operating a robot system

A method of making a hole in a substrate having a first surface and a second surface opposing the first surface and on which the hole is formed, includes forming a first depression in which the first depression is formed at the first surface of the substrate; forming a film in which the film is formed at the first depression; forming a second depression in which the second depression is formed at a location opposing the first depression of the second surface; and forming a hole in which the film is removed, the first depression and the second depression communicate with each other and thereby the hole is formed, wherein the second depression includes a plurality of straight lines and arcs in a plan view.

Method of making hole in substrate, substrate, nozzle plate and ink jet head

A driver circuit includes first and second three-terminal active elements, and first and second delay units. The first and second three-terminal active elements are series-connected. Each of the first and second three-terminal active elements has an amplification function and first, second, and third electrodes. The second and third electrodes of each three-terminal active element are series-connected between the first and second potentials. The first and second delay units receive the same input signal. The outputs of the first and second delay units are respectively connected to the first electrodes of the first and second three-terminal active elements. The delay amount of the second delay unit is larger than that of the first delay unit. The delay amount of the first delay unit is a finite value including zero.

Driver circuit

Embodiments include a semiconductor device comprising: a pad formed on an insulating layer and having an electric connection region with external components; and a protective insulating layer which has an aperture for exposing the electric connection region. The protective insulating layer may include a first insulating layer and a second insulating layer, and side surfaces of these insulating layers are exposed to the aperture. At least part of the side surfaces surrounding the electric connection region have a tapered configuration at an acute angle to a top surface of the pad. This semiconductor device not only enables reduction of the fabrication steps, but also provides a reliable passivation structure for a pad with sufficient thickness and stress relaxation characteristics.

Pad structures including insulating layers having a tapered surface

A procedure of manufacturing a semiconductor device according to the present invention first creates a gate electrode on a center portion of a gate oxide film formed on a substrate, forms a silicon oxide film over the whole surface of the substrate including the gate electrode, and etches the whole face of the silicon oxide film, so as to form a side wall of the silicon oxide film on a side face of the gate electrode. The procedure then implants an impurity ion according to a channel of a target MOS transistor, so as to specify a drain area and a source area. In the process of specifying the drain area and the source area, a resist is formed in advance on at least a peripheral portion of the gate oxide film in a high-breakdown-voltage MOS transistor, so as to prevent implantation of the impurity ion in an under-layer region below the peripheral portion of the gate oxide film. This arrangement enables both a high-breakdown-voltage MOS transistor and a low-breakdown-voltage MOS transistor to be efficiently formed on an identical substrate without damaging the characteristics of the respective transistors.

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, IN WHICH A HIGH-BREAKDOWN-VOLTAGE MOS TRANSISTOR AND A LOW-BREAKDOWN-VOLTAGE MOS TRANSISTOR ARE FORMED ON AN IDENTICAL SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY

Semiconductor devices and methods of fabricating the same

The present invention provides a technique for efficiently forming a high-breakdown voltage transistor and a low-breakdown voltage transistor on the same substrate while reducing the deterioration of each transistor's characteristics. At first, an insulating film is formed. The insulating film portions above the drain and source formation regions for the high-breakdown voltage transistor are thicker than those for the low-breakdown voltage transistor. Next, gates are formed on the insulating film. Then sidewalls are formed on the sides of the low-breakdown voltage transistor gate, and apertures are made in the insulating film portions above the drain and source formation regions for each transistor. When apertures are made in the relatively thick insulating film portions above the drain and source formation regions for the high-breakdown voltage transistor, etching is performed not to narrow widths of the sidewalls formed on the sides of the gate for the low-breakdown voltage transistor. Then drain and source regions are formed for each transistor by introduction of impure elements through the apertures.

Method for manufacturing high-breakdown voltage transistor and low-breakdown voltage transistor on the same substrate

Among first and second oxide films and formed on a substrate , the oxide film in a low-breakdown-voltage transistor area LV is all etched off, while the whole surface of the oxide film in a high-breakdown-voltage transistor area HV is left intact. A sixth oxide film for defining side walls is subsequently formed on the whole surface of the substrate in a greater thickness of approximately 2000 angstrom than a standard thickness. Over-etching of the sixth oxide film defines side walls SW. Non-required portions of the oxide film are then etched off with a resist R A. This causes a drain-source forming region, which is expected to form a drain area and a source area, to be open in an element forming region in a high-breakdown-voltage nMOS area HVn. The resist R A is not removed but is used continuously, and an n-type impurity ion is implanted into the open drain-source forming region. This arrangement enables both a high-breakdown-voltage MOS transistor and a low-breakdown-voltage MOS transistor to be formed efficiently on an identical substrate without damaging the characteristics of the respective MOS transistors.

Growing community of inventors

Tokyo, Japan

Atsushi Kanda