Tokyo, Japan

Atsufumi Inoue

This inventor holds 2 USPTO granted patents and 3 published patent applications. Top assignee: Mitsubishi Electric Corporation. Active years: 2020-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Atsufumi Inoue. Retrieved from https://idiyas.com/inventor/atsufumi-inoue

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 5.1

ph-index = 1


Company Filing History:


Years Active: 2020-2022

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2 patents (USPTO):Explore Patents

Title: Atsufumi Inoue: Innovator in Semiconductor Technology

Introduction

Atsufumi Inoue is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on improving the performance and reliability of semiconductor devices.

Latest Patents

Inoue's latest patents include a semiconductor device and a method for manufacturing a semiconductor device. The objective of his semiconductor device is to prevent organic contamination of an electrode that consists of multiple laminated metal layers. This device features a semiconductor substrate and an electrode with several layers laminated on its principal surface. The electrode comprises a first metal layer in contact with the substrate, an oxide layer containing a metal and oxygen, and a second metal layer on top of the oxide layer. The concentrations of oxygen in the oxide layer are carefully controlled to enhance performance.

Another notable patent is for a power semiconductor device. This device includes an emitter electrode on a semiconductor substrate, through which the main current flows. It features a conductive layer that is not a sintered compact and a sintered metal layer that covers the emitter electrode. This design improves heat dissipation performance and adhesion, making it a valuable advancement in semiconductor technology.

Career Highlights

Atsufumi Inoue is associated with Mitsubishi Electric Corporation, where he continues to innovate in the semiconductor field. His work has been instrumental in developing technologies that enhance the efficiency and reliability of electronic devices.

Collaborations

Inoue collaborates with talented coworkers, including Hidetada Tokioka and Tatsuro Watahiki. Their combined expertise contributes to the advancement of semiconductor technologies.

Conclusion

Atsufumi Inoue is a key figure in semiconductor innovation, with a focus on improving device performance and reliability. His contributions through patents and collaboration with industry professionals highlight his importance in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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