Mitsubishi Electric Corporation

Atsufumi Inoue

Akihiko Furukawa

Hidetada Tokioka

Seiji Oka

Tsuyoshi Kawakami

Tatsuro Watahiki

Mutsumi Tsuda

Kojiro Hara

Yasushi Fujioka

Kengo Matsufuji

An object is to provide a semiconductor device that can prevent organic contamination of an electrode including a plurality of laminated metal layers. A semiconductor device includes: a semiconductor substrate; and an electrode including a plurality of layers laminated on a principal surface of the semiconductor substrate. The electrode includes: a first metal layer in contact with the principal surface of the semiconductor substrate, the first metal layer containing Al; an oxide layer formed on a surface of the first metal layer, the oxide layer containing a metal and oxygen; and a second metal layer formed on a surface of the oxide layer. Concentrations of the oxygen in the oxide layer are higher than or equal to 8.0&#xd7;10/cmand lower than or equal to 4.0&#xd7;10/cm.

Semiconductor device and method for manufacturing semiconductor device

A power semiconductor device includes an emitter electrode disposed on a semiconductor substrate and through which a main current flows, a conductive layer that is disposed on the emitter electrode and is not a sintered compact, and a sintered metal layer that is disposed on the conductive layer and is a sintered compact. The sintered metal layer has a size to cover all the emitter electrode in plan view, and has higher heat conductivity than the conductive layer. The power semiconductor device can improve heat dissipation performance and adhesion.

Power semiconductor device

Growing community of inventors

Tokyo, Japan

Atsufumi Inoue