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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10559659 B1

PDFFull Text
Date of Patent:
Feb. 11, 2020

Filed:

Dec. 21, 2016

Power semiconductor device

Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventors:

Atsufumi Inoue, Tokyo, JP;

Seiji Oka, Tokyo, JP;

Tsuyoshi Kawakami, Tokyo, JP;

Akihiko Furukawa, Tokyo, JP;

Hidetada Tokioka, Tokyo, JP;

Mutsumi Tsuda, Tokyo, JP;

Yasushi Fujioka, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Vu A Vu

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/06 (2006.01); H01L 29/12 (2006.01); H01L 23/522 (2006.01); H01L 29/739 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 29/78 (2006.01); H01L 23/00 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0696 (2013.01); H01L 21/3205 (2013.01); H01L 21/768 (2013.01); H01L 23/48 (2013.01); H01L 23/522 (2013.01); H01L 24/26 (2013.01); H01L 29/12 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/66325 (2013.01); H01L 29/739 (2013.01); H01L 29/7393 (2013.01); H01L 29/78 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A power semiconductor device includes an emitter electrode disposed on a semiconductor substrate and through which a main current flows, a conductive layer that is disposed on the emitter electrode and is not a sintered compact, and a sintered metal layer that is disposed on the conductive layer and is a sintered compact. The sintered metal layer has a size to cover all the emitter electrode in plan view, and has higher heat conductivity than the conductive layer. The power semiconductor device can improve heat dissipation performance and adhesion.

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