Catania, Italy

Antonio Imbruglia

This inventor holds 5 USPTO granted patents. Top assignees: Stmicroelectronics Gmbh, Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Stmicroelectronics S.r.l.. Active years: 1995-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Antonio Imbruglia. Retrieved from https://idiyas.com/inventor/antonio-imbruglia

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 3

Forward Citations = 32(Granted Patents)


Company Filing History:


Years Active: 1995-2002

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5 patents (USPTO):Explore Patents

Title: Antonio Imbruglia: A Pioneer in Radiation Hardened Memory Technology

Introduction

Antonio Imbruglia, an innovative inventor hailing from Catania, Italy, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of five patents, Imbruglia has focused on creating solutions that enhance the performance and reliability of electronic devices. His work is crucial for applications requiring robust performance in challenging environments.

Latest Patents

One of Imbruglia's latest patents is titled "Radiation hardened semiconductor memory with active isolation regions." This invention addresses the challenges posed by radiation exposure in memory devices by incorporating active gate isolation structures. These structures, which include a gate oxide and a polycrystalline silicon gate layer, provide a significant improvement in reducing the susceptibility to trapped charges caused by radiation. This advancement ensures that memory devices remain operational in high-radiation environments.

Another noteworthy patent by Imbruglia is the "Electronic device for controlling the 'bouncing' in electronic circuits integrated on semiconductor substrate." This innovative device controls the oscillation of output voltage, employing a semiconductor substrate with multiple output stages. Each output transistor, featuring different channel lengths, is turned on at staggered intervals, effectively managing the oscillation and providing stable performance for connected external loads.

Career Highlights

Throughout his career, Antonio Imbruglia has worked at STMicroelectronics GmbH, where he has been instrumental in advancing semiconductor technologies. His expertise in radiation hardened memory and electronic circuit design has placed him at the forefront of innovation in the semiconductor industry.

Collaborations

Imbruglia has collaborated with notable professionals, including Charles D Waggoner and Raffaele Zambrano. These partnerships have led to the development of groundbreaking technologies that continue to influence the industry.

Conclusion

Antonio Imbruglia's contributions to semiconductor technology exemplify the spirit of innovation. With multiple patents that enhance the reliability of electronic devices, his work is vital for applications in demanding environments. Imbruglia's dedication to pushing the boundaries of technology ensures that he remains a prominent figure in the realm of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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