Anson Heryanto

Title: Anson Heryanto: Innovator in Non-Volatile Memory Technology

Introduction

Anson Heryanto is a notable inventor based in Singapore, recognized for his contributions to the field of non-volatile memory devices. With a focus on innovative methods for memory device formation, Heryanto has made significant strides in enhancing memory technology.

Latest Patents

Heryanto holds a patent for a "Method for making non-volatile memory device." This patent details a process for forming memory cells over a substrate. Each memory cell includes a control gate (CG) positioned over a floating gate (FG) and a select gate (SG) adjacent to the CG and FG. The method involves creating a vertical oxide layer between the SG and the CG and FG, forming an implant mask layer over a portion of the SG, CG, and vertical oxide of each memory cell. This innovative approach allows for the implantation of dopants into the substrate, facilitating the formation of source drain (S/D) regions between the memory cells.

Career Highlights

Anson Heryanto is currently employed at Globalfoundries Singapore Pte. Ltd., where he continues to develop cutting-edge memory technologies. His work has positioned him as a key player in the semiconductor industry, contributing to advancements that impact various electronic devices.

Collaborations

Heryanto collaborates with talented professionals in his field, including Yoke Leng Lim and Yongshun Sun. These partnerships enhance the innovative processes and research efforts within their projects.

Conclusion

Anson Heryanto's work in non-volatile memory technology exemplifies the spirit of innovation in the semiconductor industry. His patent and ongoing contributions reflect a commitment to advancing memory device technology, making a lasting impact on the field.