The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Apr. 06, 2018
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Anson Heryanto, Singapore, SG;
Eng Huat Toh, Singapore, SG;
Yongshun Sun, Singapore, SG;
Yoke Leng Lim, Singapore, SG;
Siow Lee Chwa, Singapore, SG;
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Abstract
Method for forming a memory device are disclosed. Embodiments include forming memory cells over a substrate, each memory cell includes a control gate (CG) formed over a floating gate (FG) and a select gate (SG) formed adjacent to a first side of the CG and FG, wherein a vertical oxide layer is formed between the SG and the CG and FG, forming an implant mask layer over a portion of the SG, CG and vertical oxide of each memory cell; and implanting dopants into the substrate using the implant mask to form source drain (S/D) regions between the memory cells.