Globalfoundries Singapore Pte. Ltd.

Anson Heryanto

Eng Huat Toh

Yongshun Sun

Siow Lee Chwa

Yoke Leng Lim

Method for forming a memory device are disclosed. Embodiments include forming memory cells over a substrate, each memory cell includes a control gate (CG) formed over a floating gate (FG) and a select gate (SG) formed adjacent to a first side of the CG and FG, wherein a vertical oxide layer is formed between the SG and the CG and FG, forming an implant mask layer over a portion of the SG, CG and vertical oxide of each memory cell; and implanting dopants into the substrate using the implant mask to form source drain (S/D) regions between the memory cells.

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Singapore, Singapore

Anson Heryanto