Chambery, France

Anis Jouini

USPTO Granted Patents = 4 

 

Average Co-Inventor Count = 4.2

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Chambery, FR (2018)
  • Chambéry, FR (2018)

Company Filing History:


Years Active: 2018

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4 patents (USPTO):Explore Patents

Title: Anis Jouini: Innovator in Silicon Manufacturing

Introduction

Anis Jouini is a notable inventor based in Chambery, France, recognized for his contributions to the field of silicon manufacturing. With a total of four patents to his name, Jouini has made significant advancements in methods for producing silicon cylinders and ingots.

Latest Patents

One of his latest patents is a method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace. This innovative process involves providing a crucible with a layer of monocrystalline silicon seeds and directing the solidification of silicon in a co-linear growth direction. Another significant patent focuses on manufacturing a silicon ingot with a uniform phosphorus concentration. This method ensures that the solidification speed and phosphorus evaporation rate are controlled to maintain uniformity across the ingot's height.

Career Highlights

Anis Jouini has worked with prestigious organizations, including the Commissariat à l'énergie atomique et aux énergies alternatives. His work in these institutions has allowed him to develop and refine his innovative techniques in silicon manufacturing.

Collaborations

Throughout his career, Jouini has collaborated with esteemed colleagues such as Etienne Pihan and Denis Camel. These partnerships have contributed to the advancement of his research and the successful implementation of his patented methods.

Conclusion

Anis Jouini's work in silicon manufacturing showcases his innovative spirit and dedication to advancing technology in this field. His patents reflect a commitment to improving processes that are essential for various applications in the industry.

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