Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Anis Jouini

Jean-Paul Garandet

Denis Camel

Béatrice Drevet

Etienne Pihan

David Pelletier

Fabrice Coustier

Malek Benmansour

Gautier Fortin

Vanessa Amaral De Oliveira

Benoit Marie

Denis Chavrier

Nelly Plassat

Damien Ponthenier

Julien Laurent

A method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace, including at least the following steps: (i) providing a crucible having a longitudinal axis (Z), in which the bottom is covered with a layer of seeds of monocrystalline silicon in a right prism shape; and (ii) proceeding with directed solidification of silicon by growth on seeds, in a direction of growth that is co-linear with the axis (Z) and with a concave solidification front, spatially or temporally; characterized in that the layer in step (i) of: one or more central seeds G; and one or more peripheral seeds Gcontiguous to the seed(s) G, the peripheral seeds Ghaving a specific size.

Method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace

A method for manufacturing a silicon ingot having uniform phosphorus concentration. The method includes at least the steps of: (i) providing a quasi-uniform molten silicon bath containing at least phosphorus; and (ii) proceeding to the directional solidification of the silicon, wherein a speed (VI) for solidifying the silicon and a rate (JLV) of evaporation of the phosphorus at the liquid/vapor interface of the bath are controlled such that, at each moment of the directional solidification, the following equation is verified: VI=k'/(2&#x2212;k) (E), wherein k&#x2032; is the phosphorus transfer coefficient, and k is the distribution coefficient of the phosphorus in the silicon. Also relates to a silicon ingot having uniform phosphorus concentration across a height of at least 20 cm.

Method for manufacturing a silicon ingot having uniform phosphorus concentration

The device forming a crucible for fabrication of crystalline material by directional solidification comprises a bottom and at least one side wall. The bottom presents a first portion having a first thermal resistance and a second portion having a second thermal resistance that is lower than the first thermal resistance. The second portion is designed to receive a seed for fabrication of the crystalline material. The bottom and side wall are at least partially formed by a tightly sealed part including at least one indentation participating in defining said first and second portions. The first portion is covered by a first anti-adherent layer having an additional first thermal resistance. The second portion may be covered by a second anti-adherent layer having an additional second thermal resistance that is lower than the first thermal resistance.

Device for manufacturing a crystalline material from a crucible having non-uniform heat resistance

The crystallization system includes a crucible provided with a bottom and with side walls designed to contain the material to be solidified and a device for creating a main thermal gradient inside the crucible in a perpendicular direction to the bottom of the crucible. An additional inductive heating device is arranged at the level of the side walls of the crucible facing the liquid material and without overlapping with the solid phase. This additional inductive heating device is configured to heat a part of the crystalline material located in the vicinity of the triple contact line between the liquid material, the solidified material and the crucible so that the interface between the liquid material and the solidified material forms a convex meniscus in the vicinity of the triple contact line.

System for manufacturing a crystalline material by directional crystallization provided with an additional lateral heat source

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Chambery, France

Anis Jouini