The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2018
Filed:
Sep. 16, 2014
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Jean-Paul Garandet, Le Bourget du Lac, FR;
Malek Benmansour, La Motte Servolex, FR;
Anis Jouini, Chambery, FR;
David Pelletier, La Ravoire, FR;
Abstract
A method for manufacturing a silicon ingot having uniform phosphorus concentration. The method includes at least the steps of: (i) providing a quasi-uniform molten silicon bath containing at least phosphorus; and (ii) proceeding to the directional solidification of the silicon, wherein a speed (VI) for solidifying the silicon and a rate (JLV) of evaporation of the phosphorus at the liquid/vapor interface of the bath are controlled such that, at each moment of the directional solidification, the following equation is verified: VI=k'/(2−k) (E), wherein k′ is the phosphorus transfer coefficient, and k is the distribution coefficient of the phosphorus in the silicon. Also relates to a silicon ingot having uniform phosphorus concentration across a height of at least 20 cm.