logo

For the Inventor, By the Inventor

Beaverton, OR, United States of America

Andrew N Westmeyer

USPTO Granted Patents = 11

Average Co-Inventor Count = 4.2

ph-index = 6

Forward Citations = 400(Granted Patents)


Company Filing History:

goldMedal11 out of 54,750 
 
Intel Corporation
 patents

Years Active: 2007-2013

Loading Chart...
11 patents (USPTO):Explore Patents
1. 8426858 - Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain (2013-04-23),
2. 8344452 - Metal gate transistors with raised source and drain regions formed on heavily doped substrate (2013-01-01),
3. 7858981 - Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain (2010-12-28),
4. 7812394 - CMOS transistor junction regions formed by a CVD etching and deposition sequence (2010-10-12),
5. 7479432 - CMOS transistor junction regions formed by a CVD etching and deposition sequence (2009-01-20),
6. 7479431 - Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain (2009-01-20),
7. 7427775 - Fabricating strained channel epitaxial source/drain transistors (2008-09-23),
8. 7402872 - Method for forming an integrated circuit (2008-07-22),
9. 7332439 - Metal gate transistors with epitaxial source and drain regions (2008-02-19),
10. 7226842 - Fabricating strained channel epitaxial source/drain transistors (2007-06-05),
11. 7195985 - CMOS transistor junction regions formed by a CVD etching and deposition sequence (2007-03-27),

Title: The Innovations of Andrew N Westmeyer

Introduction

Andrew N Westmeyer is a prominent inventor based in Beaverton, OR (US). He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work primarily focuses on enhancing the performance and efficiency of transistors, which are crucial components in modern electronic devices.

Latest Patents

Among his latest patents, one notable invention is the "Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain." This invention includes providing carbon doped regions and raised source/drain regions to create tensile stress in NMOS transistor channels. Another significant patent is for "Metal gate transistors with raised source and drain regions formed on heavily doped substrate." This MOS transistor is designed to be formed on a heavily doped substrate, utilizing metal gates to prevent doping from the substrate from diffusing into the channel region of the transistor.

Career Highlights

Andrew N Westmeyer is currently employed at Intel Corporation, where he continues to innovate and develop advanced semiconductor technologies. His work has been instrumental in pushing the boundaries of what is possible in transistor design and functionality.

Collaborations

Throughout his career, Andrew has collaborated with notable colleagues, including Anand S Murthy and Michael L Hattendorf. These collaborations have fostered a creative environment that has led to groundbreaking advancements in the field.

Conclusion

Andrew N Westmeyer's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the industry. His work continues to influence the development of more efficient electronic devices, showcasing the impact of his inventions.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…