The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Nov. 30, 2010
Strained nmos transistor featuring deep carbon doped regions and raised donor doped source and drain
Applicants:
Michael L. Hattendorf, Beaverton, OR (US);
Jack Hwang, Portland, OR (US);
Anand Murthy, Portland, OR (US);
Andrew N. Westmeyer, Beaverton, OR (US);
Inventors:
Michael L. Hattendorf, Beaverton, OR (US);
Jack Hwang, Portland, OR (US);
Anand Murthy, Portland, OR (US);
Andrew N. Westmeyer, Beaverton, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 31/036 (2006.01);
U.S. Cl.
CPC ...
Abstract
Some embodiments of the present invention include providing carbon doped regions and raised source/drain regions to provide tensile stress in NMOS transistor channels.