Andrej Lenz

Title: The Innovations of Andrej Lenz

Introduction

Andrej Lenz is a notable inventor based in Tittmoning, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on the development of advanced semiconductor wafers and processes that enhance their performance and usability.

Latest Patents

Lenz's latest patents include a semiconductor wafer with an epitaxially deposited layer and a process for producing the semiconductor wafer. This invention involves a substrate wafer of single crystal silicon that is doped with n-type or p-type dopant atoms. The wafer features a front surface and a back surface, with a layer deposited epitaxially on the front surface. Additionally, the substrate wafer includes a doped layer that extends into the substrate, which is crucial for its functionality. Another significant patent involves the production of semiconductor substrates with buried layers by bonding semiconductor wafers. This method aims to reduce the non-usable edge region on the bonded wafer component and improve the edge geometry of the wafer composite.

Career Highlights

Throughout his career, Andrej Lenz has worked with prominent companies in the semiconductor industry, including X-Fab Semiconductor Foundries AG and Siltronic AG. His experience in these organizations has contributed to his expertise in semiconductor technologies and innovations.

Collaborations

Lenz has collaborated with notable professionals in the field, including Roy Knechtel and Rupert Krautbauer. These collaborations have likely enriched his work and led to further advancements in semiconductor technology.

Conclusion

Andrej Lenz's contributions to semiconductor technology through his patents and career experiences highlight his role as an influential inventor in the industry. His innovative approaches continue to shape the future of semiconductor applications.