Siltronic Ag

X-fab Semiconductor Foundries Ag

Andrej Lenz

Roy Knechtel

Rupert Krautbauer

Rainer Winkler

Erwin-Peter Mayer

Gerhard Huettl

A semiconductor wafer is formed of a substrate wafer of single crystal silicon doped with dopant atoms of the n type or p type, with a front surface and a back surface, contains a layer deposited epitaxially on the front surface of the substrate wafer. The substrate wafer additionally includes an nor pdoped layer, which extends from the front surface of the substrate wafer into the substrate wafer and has a defined thickness. The semiconductor wafer is produced by a process in which dopant atoms of the n type or p type are introduced into the substrate wafer through the front surface of the substrate wafer, the dopant concentration in a layer which extends from the front surface of the substrate wafer into the substrate wafer being increased from the level nor pto the level nor p, and an epitaxial layer is then deposited on this layer.

Semiconductor wafer with an epitaxially deposited layer, and process for producing the semiconductor wafer

The invention relates to a method for producing semiconductor substrates by bonding. The aim of said method is to reduce the non-usable edge region on the bonded wafer component and to improve the edge geometry of the wafer composite. This is achieved by a method for joining two semiconductor wafers using a semiconductor wafer bonding process. The surfaces of the two semiconductor wafers that are to be bonded are provided with a border or edge geometry that has a special short front-end facet. After the bonding process, one of the two wafers is ablated to obtain an edge region that is as devoid as possible of defects and a usable wafer surface that is as large as possible.

Production of semiconductor substrates with buried layers by joining (bonding) semiconductor wafers

Growing community of inventors

Tittmoning, Germany

Andrej Lenz