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For the Inventor, By the Inventor

Dresden, Germany

Andreas Felber

USPTO Granted Patents = 10

Average Co-Inventor Count = 3.2

ph-index = 3

Forward Citations = 108(Granted Patents)


Location History:

  • Munich, DE (2005)
  • München, DE (2005)
  • Dresden, DE (2005 - 2007)

Company Filing History:

goldMedal10 out of 14,724 
 
Infineon Technologies Ag
 patents

Years Active: 2005-2007

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10 patents (USPTO):Explore Patents
1. 7205567 - Semiconductor product having a semiconductor substrate and a test structure and method (2007-04-17),
2. 7126204 - Integrated semiconductor circuit with an electrically programmable switching element (2006-10-24),
3. 7126154 - Test structure for a single-sided buried strap DRAM memory cell array (2006-10-24),
4. 6930325 - Test structure for improved vertical memory arrays (2005-08-16),
5. 6930324 - Device architecture and process for improved vertical memory arrays (2005-08-16),
6. 6897077 - Test structure for determining a short circuit between trench capacitors in a memory cell array (2005-05-24),
7. 6878965 - Test structure for determining a region of a deep trench outdiffusion in a memory cell array (2005-04-12),
8. 6856562 - Test structure for measuring a junction resistance in a DRAM memory cell array (2005-02-15),
9. 6853000 - Test structure for determining a doping region of an electrode connection between a trench capacitor and a selection transistor in a memory cell array (2005-02-08),
10. 6838724 - Transistor array and semiconductor memory configuration fabricated with the transistor array (2005-01-04),

Title: The Innovations of Andreas Felber

Introduction

Andreas Felber is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on enhancing the performance and reliability of semiconductor products.

Latest Patents

One of his latest patents is a semiconductor product that features a semiconductor substrate and a test structure. This invention includes a method for making electrical measurements to determine the nonreactive resistance of dopant diffusion regions, known as 'buried straps'. This innovation allows for accurate measurements without interference from the transistor channel's nonreactive resistance. Another notable patent is a test structure for a single-sided buried strap DRAM memory cell array. This structure is designed to assess the electrical properties of memory cells in a matrix-like configuration, facilitating improved performance in memory cell arrays.

Career Highlights

Andreas Felber is currently employed at Infineon Technologies AG, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing advanced semiconductor products that meet the demands of modern technology.

Collaborations

He has collaborated with notable colleagues such as Valentin Rosskopf and Bernhard Kowalski, contributing to a dynamic and innovative work environment.

Conclusion

Andreas Felber's contributions to semiconductor technology exemplify the spirit of innovation. His patents reflect a commitment to advancing the field and improving the functionality of electronic devices.

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