The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2006

Filed:

Sep. 03, 2004
Applicants:

Valentine Rosskopf, Pöttmes, DE;

Susanne Lachenmann, München, DE;

Sibina Sukman-prähofer, München, DE;

Andreas Felber, Dresden, DE;

Inventors:

Valentine Rosskopf, Pöttmes, DE;

Susanne Lachenmann, München, DE;

Sibina Sukman-Prähofer, München, DE;

Andreas Felber, Dresden, DE;

Assignee:

Infineon Technologies AG, München, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 29/10 (2006.01); H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract

A test structure for determining the electrical properties of a memory cell in a matrix-like cell array constructed on the basis of the single-sided buried strap concept has a connection between internal electrodes in the storage capacitors in two adjacent memory cells in the direction of the row of active regions in order to produce a series circuit. A first selection transistor and a first storage capacitor in a first memory cell and a second selection transistor and a second storage capacitor in a second memory cell, the active regions of the first and second selection transistors not being connected between the first and second selection transistors via a contact-making bit line.


Find Patent Forward Citations

Loading…