The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Jan. 20, 2006
Andreas Felber, Dresden, DE;
Susanne Lachenmann, Munich, DE;
Valentin Rosskopf, Poettmes-Schorn, DE;
Sibina Sukman-praehofer, Munich, DE;
Andreas Felber, Dresden, DE;
Susanne Lachenmann, Munich, DE;
Valentin Rosskopf, Poettmes-Schorn, DE;
Sibina Sukman-Praehofer, Munich, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A semiconductor product having a test structure, in which a contact connection short-circuits that source/drain region of a transistor which is connected to an inner capacitor electrode of a trench capacitor by a dopant diffusion region with an interconnect is disclosed. Methods are disclosed for making an electrical measurement, to determine the nonreactive resistance of dopant diffusion regions, the so-called 'buried straps', without the measurement result being corrupted by the nonreactive resistance of a transistor channel. In accordance with one embodiment of the invention having a plurality of electrical connections of the capacitor electrode, static currents can also be conducted through a buried strap and the capacitor electrode. Embodiments are disclosed that make it possible to perform at novel test structures of a semiconductor wafer electrical resistance measurements, which cannot be carried out at memory cells of a memory cell array themselves.