Allen John Leith

Title: Innovations of Allen John Leith

Introduction

Allen John Leith is a prominent inventor based in Austin, TX (US). He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on advanced methods for silicon and silicon germanium deposition, which are crucial for the development of micro-features in semiconductor devices.

Latest Patents

One of his latest patents is titled "Reduced defect silicon or silicon germanium deposition in micro-features." This patent describes a method for achieving reduced defect deposition, such as void-free silicon or silicon germanium in micro-features on a patterned substrate. The method involves forming a seed layer at the bottom of the micro-feature and selectively growing silicon or silicon germanium from the bottom up. Another notable patent is "Silicon germanium surface layer for high-k dielectric integration." This patent outlines a method for using a silicon germanium surface layer to integrate a high-k dielectric layer into a semiconductor device, enhancing the performance and efficiency of these devices.

Career Highlights

Allen John Leith is currently employed at Tokyo Electron Limited, a leading company in the semiconductor manufacturing industry. His innovative approaches and patented methods have positioned him as a key figure in advancing semiconductor technology.

Collaborations

Throughout his career, Allen has collaborated with notable professionals in the field, including Anthony Dip and Seungho Oh. These collaborations have further enriched his work and contributed to the success of his inventions.

Conclusion

Allen John Leith's contributions to semiconductor technology through his patents and innovative methods have made a significant impact in the industry. His work continues to influence advancements in micro-feature fabrication and high-k dielectric integration.