Company Filing History:
Years Active: 2013-2024
Title: The Innovative Contributions of Ali Keshavarzi
Introduction
Ali Keshavarzi is a prominent inventor based in Los Altos Hills, California. He has made significant contributions to the field of integrated circuits, holding a total of six patents. His work focuses on advancing manufacturing methods and enhancing the functionality of integrated circuits.
Latest Patents
One of Ali Keshavarzi's latest patents involves an integrated circuit that features a first diffusion area for a first type transistor. This first type transistor includes a first drain region and a first source region. Additionally, there is a second diffusion area for a second type transistor, which is separated from the first diffusion area. The second type transistor also includes a second drain region and a second source region. A gate electrode continuously extends across both diffusion areas in a routing direction. The design includes a first metallic structure that is electrically coupled with the first source region, and a second metallic structure that is electrically coupled with the second drain region. Furthermore, a third metallic structure is disposed over and electrically coupled with the first and second metallic structures. Notably, the width of the first metallic structure is substantially equal to or larger than the width of the third metallic structure.
Career Highlights
Ali Keshavarzi has built a successful career in the semiconductor industry. He is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate and develop new technologies in integrated circuits.
Collaborations
Throughout his career, Ali has collaborated with notable colleagues, including Chung-Cheng Wu and Ta-Pen Guo. These collaborations have contributed to the advancement of his research and the successful development of his patents.
Conclusion
Ali Keshavarzi's work in integrated circuits exemplifies the spirit of innovation in the technology sector. His contributions have the potential to significantly impact the future of semiconductor manufacturing.