The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
May. 26, 2010
Chung-cheng Wu, Ju-Bei, TW;
Ali Keshavarzi, Los Altos Hills, CA (US);
Ka Hing Fung, Hsinchu, TW;
Ta-pen Guo, Cupertino, CA (US);
Jiann-tyng Tzeng, Hsinchu, TW;
Yen-ming Chen, Chu-Pei, TW;
Shyue-shyh Lin, Hsinchu, TW;
Shyh-wei Wang, Hsinchu, TW;
Sheng-jier Yang, Zhubei, TW;
Hsiang-jen Tseng, Hsinchu, TW;
David B. Scott, Plano, TX (US);
Min Cao, Hsinchu, TW;
Chung-Cheng Wu, Ju-Bei, TW;
Ali Keshavarzi, Los Altos Hills, CA (US);
Ka Hing Fung, Hsinchu, TW;
Ta-Pen Guo, Cupertino, CA (US);
Jiann-Tyng Tzeng, Hsinchu, TW;
Yen-Ming Chen, Chu-Pei, TW;
Shyue-Shyh Lin, Hsinchu, TW;
Shyh-Wei Wang, Hsinchu, TW;
Sheng-Jier Yang, Zhubei, TW;
Hsiang-Jen Tseng, Hsinchu, TW;
David B. Scott, Plano, TX (US);
Min Cao, Hsinchu, TW;
Abstract
An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is spaced from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. The first metallic layer is electrically coupled with the first source region. The first metallic layer and the first diffusion area overlap with a first distance. A second metallic layer is electrically coupled with the first drain region and the second drain region. The second metallic layer and the first diffusion area overlap with a second distance. The first distance is larger than the second distance.