Kanagawa, Japan

Akihito Sakakidani

USPTO Granted Patents = 3 

Average Co-Inventor Count = 2.4

ph-index = 2

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2008-2017

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3 patents (USPTO):Explore Patents

Title: Akihito Sakakidani: Innovator in Semiconductor Technology

Introduction

Akihito Sakakidani is a notable inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving the performance and manufacturing processes of semiconductor devices.

Latest Patents

One of Sakakidani's latest patents involves a semiconductor device that includes a Metal-Insulator-Semiconductor Field-Effect Transistor (MISFET). This device features a silicon nitride film that covers part of the source/drain of the MISFET, enhancing the device's performance. Another patent details a method for manufacturing N-type MOSFETs, which includes implanting p-type dopants to form channel and halo regions, thereby improving device characteristics and reducing variations.

Career Highlights

Throughout his career, Akihito Sakakidani has worked with prominent companies in the semiconductor industry, including Renesas Electronics Corporation and NEC Electronics Corporation. His experience in these organizations has allowed him to develop innovative solutions that address the challenges faced in semiconductor manufacturing.

Collaborations

Sakakidani has collaborated with esteemed colleagues such as Toshinori Fukai and Kiyotaka Imai. These partnerships have contributed to the advancement of semiconductor technologies and have fostered a collaborative environment for innovation.

Conclusion

Akihito Sakakidani's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices.

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