Renesas Electronics Corporation

Nec Electronics Corporation

Akihito Sakakidani

Kiyotaka Imai

Kazuya Uejima

Hidetatsu Nakamura

Eiichirou Watanabe

Toshinori Fukai

A semiconductor device includes a MISFET. The semiconductor device also includes a silicon nitride filmand a silicon nitride filmarranged on the silicon nitride film. The silicon nitride filmcovers at least a portion of an upper part of a source/drainof the MISFET and has a film thickness thinner than a height of a gate electrode. The source/drainincludes nickel silicideon its boundary to the silicon nitride film. The silicon nitride filmis a stressed film. A tight adhering property between the silicon nitride filmand the surface of the source/drainand that between the silicon nitride filmand the silicon nitride filmare rendered higher than a tight adhering property which would prevail when the silicon nitride filmbe made to adhere tightly to the source/drain

Semiconductor device

A method of manufacturing N-type MOSFET includes: implanting a p-type dopant into in a surface layer of a semiconductor substrate to form a channel region; forming a gate insulating film including High-k material and a gate electrode on said channel region; implanting a p-type dopant into both ends of said channel region in an inner portion of said semiconductor substrate to form halo regions; implanting a p-type dopant into both ends of said channel region in a surface layer of said semiconductor substrate to form extension regions. One of said step of forming said channel region and said step of forming halo regions includes: implanting C into one of said channel region and said halo regions. An inclusion amount of said High-k material is an amount that increase of a threshold voltage caused by said High-k material being included in said gate insulating film compensates for decrease of said threshold voltage caused by said C being implanted.

Semiconductor device and method for manufacturing the same in which variations are reduced and characteristics are improved

Method of manufacturing a semiconductor device includes: forming a substrate protection film to cover an n-type FET forming region having a first gate electrode and a p-type FET forming region having a second gate electrode; opening the p-type FET forming region by patterning a resist film after the resist film is formed to cover the n-type FET and p-type FET forming regions; exposing the surface of the semiconductor substrate by selectively removing the substrate protection film in the p-type FET forming region, leaving the film only on side walls of the second gate electrode; forming a pair of p-type extension regions at both sides of the second gate electrode, by doping impurities to the semiconductor substrate, with the resist film, the second gate electrode, and the substrate protection film formed on side walls of the second electrode; and removing the resist film formed on the n-type FET forming region.

Growing community of inventors

Kanagawa, Japan

Akihito Sakakidani