The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Apr. 30, 2015
Renesas Electronics Corporation, Kanagawa, JP;
Kazuya Uejima, Tokyo, JP;
Hidetatsu Nakamura, Tokyo, JP;
Akihito Sakakidani, Kanagawa, JP;
Eiichirou Watanabe, Kanagawa, JP;
RENESAS ELECTRONICS CORPORATION, Kanagawa, JP;
Abstract
A semiconductor device includes a MISFET. The semiconductor device also includes a silicon nitride filmand a silicon nitride filmarranged on the silicon nitride film. The silicon nitride filmcovers at least a portion of an upper part of a source/drainof the MISFET and has a film thickness thinner than a height of a gate electrode. The source/drainincludes nickel silicideon its boundary to the silicon nitride film. The silicon nitride filmis a stressed film. A tight adhering property between the silicon nitride filmand the surface of the source/drainand that between the silicon nitride filmand the silicon nitride filmare rendered higher than a tight adhering property which would prevail when the silicon nitride filmbe made to adhere tightly to the source/drain