Akihiro Maesaka

This inventor holds 9 USPTO granted patents and 3 published patent applications and 1 EPO patent. Top assignees: Sony Corporation, Sony Semiconductor Solutions Corporation. Active years: 2003-2017.

USPTO Granted Patents = 9 (Patent Applications = 3)

% Patents Active = 33.3

EPO Patents = 1 (Patent Applications = 1)

Average Co-Inventor Count = 3.0

ph-index = 4

Forward Citations = 43(Granted Patents)

Company Filing History:

Sony Semiconductor Solutions Corporation

patents

Years Active: 2003-2017

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9 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9577187 - Memory element with ion conductor layer in which metal ions diffuse and memory device incorporating same (2017-02-21),

2. 9136470 - Memory element with ion conductor layer in which metal ions diffuse and memory device incorporating same (2015-09-15),

3. 8981325 - Memory device and storage apparatus (2015-03-17),

4. 8884397 - Memory device and storage apparatus (2014-11-11),

5. 8871672 - Platinum-containing catalyst and method of producing the same, electrode and electrochemical device (2014-10-28),

6. 7719082 - Memory device and storage apparatus (2010-05-18),

7. 7675053 - Memory device comprising a memory layer and a metal chalcogenide ion-source layer (2010-03-09),

8. 7193287 - Magnetic memory device, a method for manufacturing a magnetic memory device, and an integrated circuit device including such magnetic memory device (2007-03-20),

9. 6596418 - Magnetic recording medium comprising an artificial lattice film containing B and O elements (2003-07-22),

Title: Akihiro Maesaka: Innovator in Memory Technology

Introduction

Akihiro Maesaka is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of memory technology, holding a total of 9 patents. His work focuses on developing advanced memory elements that enhance performance and reliability.

Latest Patents

One of his latest patents is a memory element with an ion conductor layer in which metal ions diffuse, along with a memory device incorporating the same. This invention aims to reduce variations in resistance values in the initial or erase state of multiple memory elements. It is designed to retain the resistance value during write/erase operations over multiple cycles. The memory element consists of a first electrode, a memory layer, and a second electrode. The memory layer includes an ion source layer containing chalcogen elements such as tellurium (Te), sulfur (S), and selenium (Se), along with metal elements like copper (Cu), silver (Ag), zinc (Zn), and zirconium (Zr). Additionally, it features two or more high-resistance layers with varying compositions that have a higher resistance value than the ion source layer.

Career Highlights

Throughout his career, Akihiro Maesaka has worked with notable companies, including Sony Corporation and Sony Semiconductor Solutions Corporation. His experience in these organizations has allowed him to refine his expertise in memory technology and contribute to innovative solutions in the industry.

Collaborations

He has collaborated with esteemed colleagues such as Katsuhisa Aratani and Akira Kouchiyama, further enhancing the impact of his work in the field.

Conclusion

Akihiro Maesaka's contributions to memory technology through his patents and collaborations highlight his role as a key innovator in the industry. His inventions continue to influence advancements in memory devices, showcasing the importance of innovation in technology.