The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Dec. 06, 2010
Applicants:
Katsuhisa Aratani, Chiba, JP;
Akihiro Maesaka, Kanagawa, JP;
Akira Kouchiyama, Kanagawa, JP;
Tomohito Tsushima, Kanagawa, JP;
Inventors:
Katsuhisa Aratani, Chiba, JP;
Akihiro Maesaka, Kanagawa, JP;
Akira Kouchiyama, Kanagawa, JP;
Tomohito Tsushima, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 47/00 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0011 (2013.01); H01L 45/085 (2013.01); G11C 13/0007 (2013.01); H01L 45/143 (2013.01); H01L 27/2409 (2013.01); H01L 45/1233 (2013.01); G11C 2213/34 (2013.01); G11C 2213/56 (2013.01); H01L 45/144 (2013.01); H01L 45/1266 (2013.01); G11C 2213/11 (2013.01); H01L 45/146 (2013.01); H01L 27/2436 (2013.01); G11C 2213/33 (2013.01); G11C 2213/15 (2013.01); H01L 45/1625 (2013.01); H01L 45/145 (2013.01); G11C 2213/72 (2013.01);
Abstract
A memory devicehaving an arrangement in which a memory thin film is sandwiched between first and second electrodes, the memory thin film contains at least rare earth elements, the memory thin filmor a layer in contact with the memory thin film contains any one of elements selected from Cu, Ag, Zn and the memory thin film or the layer in contact with the memory thin film contains any one of elements selected from Te, S, Se.