Sony Corporation

Sony Semiconductor Solutions Corporation

Akihiro Maesaka

Katsuhisa Aratani

Akira Kouchiyama

Tomohito Tsushima

Tetsuya Mizuguchi

Koji Miyata

Kazuhiro Ohba

Motonari Honda

Hiroyuki Ohmori

Yoshihiro Kudo

Shuji Goto

Shizuka Hosoi

Yuli Li

The present invention provides a memory element and a memory device realizing reduced variations in resistance values in an initial state or erase state of a plurality of memory elements and capable of retaining the resistance value in a write/erase state for writing/erasing operations of a plurality of times. The memory element includes a first electrode, a memory layer, and a second electrode in order. The memory layer has: an ion source layer containing at least one of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and at least one metal element selected from copper (Cu), silver (Ag), zinc (Zn), and zirconium (Zr); and two or more high-resistance layers having a resistance value higher than that of the ion source layer and having different compositions.

Memory element with ion conductor layer in which metal ions diffuse and memory device incorporating same

A memory devicehas an arrangement in which a memory thin filmis sandwiched between first and second electrodesand, the memory thin filmcontains at least rare earth elements, the memory thin filmor a layer 3 in contact with the memory thin filmcontains any one of elements selected from Cu, Ag, Zn and the memory thin filmor the layer 3 in contact with the memory thin filmcontains any one of elements selected from Te, S, Se. The memory device can record and read information with ease stably, and this memory device can be manufactured easily by a relatively simple manufacturing method.

Memory device and storage apparatus

A memory devicehaving an arrangement in which a memory thin film is sandwiched between first and second electrodes, the memory thin film contains at least rare earth elements, the memory thin filmor a layer in contact with the memory thin film contains any one of elements selected from Cu, Ag, Zn and the memory thin film or the layer in contact with the memory thin film contains any one of elements selected from Te, S, Se.

In one example embodiment, a core-shell type platinum-containing catalyst is allowed to reduce the amount of used platinum and has high catalytic activity and stability. In one example embodiment, the core-shell type platinum-containing catalyst includes a core particle (with an average particle diameter R) made of a non-platinum element and a platinum shell layer (with an average thickness t) satisfying 1.4 nm&#x2266;R&#x2266;3.5 nm and 0.25 nm&#x2266;t&#x2266;0.9 nm. The core particle includes an element satisfying E&#x2267;3.0 eV, where average binding energy relative to the Fermi level of 5d orbital electrons of platinum present on an outermost surface of the shell layer is E. In a fuel cell including a platinum-containing catalyst which contains a Ru particle as a core particle, the output density at a current density of 300 mA/cmis 70 mW/cmor over, and an output retention ratio is approximately 90% or over.

Platinum-containing catalyst and method of producing the same, electrode and electrochemical device

A memory devicehas an arrangement in which a memory thin filmis sandwiched between first and second electrodesand, the memory thin filmcontains at least rare earth elements, the memory thin filmor a layerin contact with the memory thin filmcontains any one of elements selected from Cu, Ag, Zn and the memory thin filmor the layerin contact with the memory thin filmcontains any one of elements selected from Te, S, Se. The memory device can record and read information with ease stably, and this memory device can be manufactured easily by a relatively simple manufacturing method.

A memory element in which data recording and data readout can be performed stably without difficulties and which can be manufactured with a comparatively simplified method is provided. The memory elementincludes a memory layerand an ion source layerpositioned between the first electrodeand the second electrode, in which the ion source layercontains any of elements selected from Cu, Ag, Zn and any of elements selected from Te, S, Se, and the ion source layer further contains boron (or rare-earth elements and silicon).

Memory device comprising a memory layer and a metal chalcogenide ion-source layer

This invention proposes a stable magnetic memory device that is equipped with a storage cell having a MTJ, wherein variation in the coercive force (Hc) of a ferromagnetic free layer is suppressed, and a switching characteristic of a bit of a MRAM is improved, and there is no write error. Namely in a magnetic memory device equipped with a first wiring, a second wiring (bit line) intersecting with the first wiring, and a storage cell for writing/reading information of a magnetic spin at an intersecting area of the first wiring and the second wiring, a partial sidewall portion electrically connecting to the storage cell of the second wiring (bit line) has a forward tapered form having a contact angle relative to a top surface of the storage cell being 45 degrees or more.

Magnetic memory device, a method for manufacturing a magnetic memory device, and an integrated circuit device including such magnetic memory device

To provide a magnetic recording medium which greatly decreases a transition noise in a layered magnetic recording layer, excels in an S/N ratio, and is suited for short wavelength recording, the magnetic recording medium includes a vertical magnetic recording film comprising an artificial lattice film formed by alternately layering a Pt or Pd layer and a Co layer and containing B and O elements.

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Kanagawa, Japan

Akihiro Maesaka