The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Jul. 24, 2015
Sony Corporation, Tokyo, JP;
Akihiro Maesaka, Kanagawa, JP;
Kazuhiro Ohba, Miyagi, JP;
Tetsuya Mizuguchi, Kanagawa, JP;
Koji Miyata, Kanagawa, JP;
Motonari Honda, Kanagawa, JP;
Katsuhisa Aratani, Aichi, JP;
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Abstract
The present invention provides a memory element and a memory device realizing reduced variations in resistance values in an initial state or erase state of a plurality of memory elements and capable of retaining the resistance value in a write/erase state for writing/erasing operations of a plurality of times. The memory element includes a first electrode, a memory layer, and a second electrode in order. The memory layer has: an ion source layer containing at least one of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and at least one metal element selected from copper (Cu), silver (Ag), zinc (Zn), and zirconium (Zr); and two or more high-resistance layers having a resistance value higher than that of the ion source layer and having different compositions.