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For the Inventor, By the Inventor

Kruibeke, Belgium

Abhishek Banerjee

This inventor holds 19 USPTO granted patents and 2 published patent applications, primarily in High Electron Mobility Transistors. Top assignee: Semiconductor Components Industries, LLC. Active years: 2015-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Abhishek Banerjee. Retrieved from https://idiyas.com/inventor/abhishek-banerjee-jom3fond

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19 

% Patents Active = 100.0

Average Co-Inventor Count = 2.9

ph-index = 4

Forward Citations = 41(Granted Patents)


Location History:

  • Mechelen, BE (2015 - 2017)
  • Kruibeke, BE (2018 - 2024)

Company Filing History:

goldMedal19 out of 3,733 
 
Semiconductor Components Industries, LLC
 patents

Years Active: 2015-2024

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Areas of Expertise:
HEMT Devices
Electronic Device
Doped Gate Electrode
Transistor Structure
GaN Channel Regrowth
Opto-Electronic HEMT
Barrier Layer
III-V Materials
Polycrystalline Semiconductor
Ohmic Contact Structure
Access Region
2DEG
19 patents (USPTO):Explore Patents
1. 12183815 - Non-linear HEMT devices (2024-12-31),
2. 11942326 - Process of forming an electronic device including a doped gate electrode (2024-03-26),
3. 11444190 - Electronic device including a high electron mobility transistor including a gate electrode and a gate interconnect and a method of using the same (2022-09-13),
4. 11342443 - Process of forming an electronic device including a transistor structure (2022-05-24),
5. 11335798 - Enhancement mode MISHEMT with GaN channel regrowth under a gate area (2022-05-17),
6. 10964733 - Opto-electronic HEMT (2021-03-30),
7. 10818787 - Electronic device including a high electron mobility transistor including a gate electrode and a dielectric film (2020-10-27),
8. 10811527 - Electronic device including high electron mobility transistors (2020-10-20),
9. 10797168 - Electronic device including a high electron mobility transistor that includes a barrier layer having different portions (2020-10-06),
10. 10797153 - Process of forming an electronic device including an access region (2020-10-06),
11. 10797152 - Process of forming an electronic device including an access region (2020-10-06),
12. 10680094 - Electronic device including a high electron mobility transistor including a gate electrode (2020-06-09),
13. 10680092 - Electronic device including a transistor with a non-uniform 2DEG (2020-06-09),
14. 10644127 - Process of forming an electronic device including a transistor structure (2020-05-05),
15. 10269947 - Electronic device including a transistor including III-V materials and a process of forming the same (2019-04-23),

Title: Abhishek Banerjee: Innovator in High Electron Mobility Transistors

Introduction: Abhishek Banerjee, based in Kruibeke, Belgium, is an accomplished inventor with a remarkable portfolio of 19 patents. His innovative contributions predominantly lie in the design and application of High Electron Mobility Transistors (HEMTs), which are pivotal in enhancing electronic device performance.

Latest Patents: Among his latest patents, Abhishek has developed groundbreaking technologies in non-linear HEMT devices. These HEMTs are characterized by their unique circular gate design, which integrates a drain region positioned within the circular gates and a circular source region encircling them. This innovative configuration not only optimizes the transistor's efficiency but also ensures improved operational characteristics. Another notable patent outlines a process for forming an electronic device that includes a doped gate electrode. This process involves the strategic arrangement of p-type dopant atoms and n-type doped regions, leading to devices with excellent turn-on characteristics and significantly lower gate leakage in the on-state. This advancement signals a leap in the design of HEMTs compared to conventional structures.

Career Highlights: Abhishek currently works at Semiconductor Components Industries, LLC, where he applies his extensive knowledge in semiconductor physics and device engineering. His dedication to advancing semiconductor technology has positioned him at the forefront of innovation in the field.

Collaborations: Throughout his career, Abhishek has collaborated with accomplished professionals such as Peter Moens and Piet Vanmeerbeek. These strategic partnerships have further enhanced the research environment, allowing for cross-pollination of ideas and accelerating the development of innovative solutions in semiconductor technology.

Conclusion: With a total of 19 patents to his name, Abhishek Banerjee has made significant strides in the field of High Electron Mobility Transistors. His contributions not only reflect his expertise and passion for invention but also highlight the potential of innovative technologies to shape the future of electronic devices. His ongoing work continues to inspire and pave the way for advancements in semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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