The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Jan. 07, 2021
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Abhishek Banerjee, Kruibeke, BE;
Peter Moens, Erwetegem, BE;
Herbert De Vleeschouwer, Zulte, BE;
Peter Coppens, Kanegem, BE;
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/2003 (2013.01); H01L 29/42356 (2013.01); H01L 29/7787 (2013.01);
Abstract
High Electron Mobility Transistors (HEMTs) are described with a circular gate, with a drain region disposed within the circular gates and circular source region disposed around the circular gates. The circular gate and the circular source region may form complete circles.