Zulte, Belgium

Herbert De Vleeschouwer

USPTO Granted Patents = 7 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2017-2024

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7 patents (USPTO):Explore Patents

Title: The Innovative Mind of Herbert De Vleeschouwer

Introduction

Herbert De Vleeschouwer is a distinguished inventor based in Zulte, Belgium, known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio that includes seven patents, he has made notable strides in advancing the design and functionality of High Electron Mobility Transistors (HEMTs).

Latest Patents

De Vleeschouwer's latest innovations focus on non-linear HEMT devices that utilize a unique circular gate design. These patents describe a configuration where the drain region is positioned within the circular gates, while the circular source region surrounds them. This geometric approach allows for enhanced performance and efficiency. Additionally, his work on high electron mobility transistors includes a design featuring a main transistor with a distinct main active area and a sense transistor with its own sense active area, ensuring isolation between the two for improved functionality.

Career Highlights

Herbert De Vleeschouwer currently works at Semiconductor Components Industries, LLC, where he applies his expertise in semiconductor technology to drive innovation. Throughout his career, he has focused on creating devices that enhance speed and performance in electronic applications, solidifying his reputation as a leading inventor in the field.

Collaborations

In his journey, De Vleeschouwer has collaborated with notable colleagues such as Peter Moens and Jaume Roig-Guitart. These partnerships reflect a commitment to fostering innovation through teamwork and shared knowledge within the semiconductor industry.

Conclusion

With a strong foundation of patents and a focus on groundbreaking technologies, Herbert De Vleeschouwer continues to be a valuable asset in the field of semiconductor innovation. His work not only contributes to advancements in HEMT designs but also inspires future generations of inventors and engineers in the realm of electronics.

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