The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Oct. 28, 2019
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Peter Moens, Erwetegem, BE;
Arno Stockman, Ronse, BE;
Samir Mouhoubi, Oudenaarde, BE;
Abhishek Banerjee, Kruibeke, BE;
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
An electronic device can include a HEMT that includes a channel layer, a barrier layer, and a gate electrode. The barrier layer can be disposed between the channel layer and the gate electrode and include a first portion, a second portion, and a third portion. The second portion can be spaced apart from the channel layer by the first portion, and the second portion is spaced apart from the gate electrode by the third portion. The second portion of the barrier layer can be configured to trap more charge, more readily recombine electrons and holes, or both as compared to each of the first and third portions of the barrier layer. The HEMT can have a Vof at least 2 V and a subthreshold slope of at most 50 mV/decade of I.