The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Jul. 02, 2018
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Abhishek Banerjee, Kruibeke, BE;
Piet Vanmeerbeek, Sleidinge, BE;
Peter Moens, Erwetegem, BE;
Marnix Tack, Merelbeke, BE;
Woochul Jeon, Phoenix, AZ (US);
Ali Salih, Mesa, AZ (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
A process of forming an electronic device can include forming a channel layer overlying a substrate and forming a barrier layer overlying the channel layer. In an embodiment, the process can further include forming a p-type semiconductor layer over the barrier layer, patterning the p-type semiconductor layer to define at least part of a gate electrode of a transistor structure, and forming an access region layer over the barrier layer. In another embodiment, the process can further include forming an etch-stop layer over the barrier layer, forming a sacrificial layer over the etch-stop layer, patterning the etch-stop and sacrificial layers to define a gate region, forming an access region layer over the barrier layer after patterning the etch-stop and sacrificial layers, and forming a p-type semiconductor layer within the gate region.