For the Inventor, By the Inventor

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Torrance, CA, United States of America

Global Communication Semiconductors, LLC

USPTO Granted Patents = 16

Forward Citations = 47

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14 inventors (with patents filed for the assignee):

Shing-Kuo Wang (14 out of 14 patents)

Liping Daniel Hou (12 out of 13 patents)

Yuefei Yang (6 out of 6 patents)

4. Robert Bruce Stokes (4 out of 26 patents)

5. Kun-Mao Pan (3 out of 3 patents)

6. Dheeraj Mohata (2 out of 2 patents)

7. Alvin M Kong (2 out of 16 patents)

8. Dae-Jin Hyun (2 out of 2 patents)

9. Wing Yau (1 out of 3 patents)

10. Samuel C Wang (1 out of 1 patent)

11. Peter Lao (1 out of 1 patent)

12. Dhiraj Kumar (1 out of 1 patent)

13. Alexander M Vigo (1 out of 1 patent)

14. Andy Chien-Hsiang Chen (1 out of 1 patent)

16 patents: Sort by Forward Citations

1. 12329035 - Bulk acoustic wave resonator with improved structures (2025-06-10),

2. 12155368 - Support structure for bulk acoustic wave resonator (2024-11-26),

3. 12028050 - Bulk acoustic wave filter with reduced second harmonics generation (2024-07-02),

4. 12027616 - Embedded non-overlapping source field design for improved GaN HEMT microwave performance (2024-07-02),

5. 12021498 - Bulk acoustic wave resonator with multilayer base (2024-06-25),

6. 11979134 - Composite piezoelectric film and bulk acoustic resonator incorporating same (2024-05-07),

7. 11909373 - Bulk acoustic resonator structures with improved edge frames (2024-02-20),

8. 11817839 - Single-crystal bulk acoustic wave resonator and method of making thereof (2023-11-14),

9. 11764750 - Support structure for bulk acoustic wave resonator (2023-09-19),

10. 11736088 - Film bulk acoustic resonator with spurious resonance suppression (2023-08-22),

11. 11335815 - Method of making wide tuning range and super low capacitance varactor diodes (2022-05-17),

12. 11276764 - Method of making high frequency InGaP/GaAs HBTs (2022-03-15),

13. 10601391 - Film bulk acoustic resonator with spurious resonance suppression (2020-03-24),

14. 10175099 - Edge-coupled semiconductor photodetector (2019-01-08),

15. 9269784 - Gallium arsenide based device having a narrow band-gap semiconductor contact layer (2016-02-23),

Company Overview

Global Communication Semiconductors, LLC, based in Torrance, California, specializes in the development and manufacturing of advanced semiconductor solutions. The company focuses on high-performance devices that cater to various sectors, including telecommunications and data communication. With a commitment to innovation, Global Communication Semiconductors leverages cutting-edge technology to enhance connectivity and efficiency in communication systems, positioning itself as a key player in the semiconductor industry.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 13 2026

16 Patents

#38 in Torrance, CA

#4,770 in California

#19,922 in US

#37,831 in the World

Torrance, CA, United States of America

Global Communication Semiconductors, LLC

Forward Citations = 47

14 inventors:

Shing-Kuo Wang (14 out of 14 patents)

Liping Daniel Hou (12 out of 13 patents)

Yuefei Yang (6 out of 6 patents)

4. Robert Bruce Stokes (4 out of 26 patents)

5. Kun-Mao Pan (3 out of 3 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Global Communication Semiconductors, LLC. Retrieved from https://idiyas.com/company/global-communication-semiconductors

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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