The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Aug. 19, 2014
Global Communication Semiconductors, Inc., Torrance, CA (US);
Yuefei Yang, Torrance, CA (US);
Shing-Kuo Wang, Torrance, CA (US);
Liping D. Hou, Torrance, CA (US);
GLOBAL COMMUNICATION SEMICONDUCTORS, INC., Torrance, CA (US);
Abstract
A device includes a semiconductor die. The semiconductor die includes a plurality of semiconductor layers disposed on a GaAs substrate, including a first semiconductor layer having a first band-gap and a second semiconductor layer having a second band-gap. The semiconductor die further includes a contact layer disposed epitaxially upon the first semiconductor layer. The contact layer has a thickness that is less than a critical thickness. The second semiconductor layer is epitaxially disposed upon the contact layer. The contact layer has a third band-gap that is less than the first band-gap and the second band-gap. The semiconductor die further includes a conductive layer disposed upon the contact layer to form an ohmic contact. The conductive layer comprises one or more metal layers compatible with silicon processing techniques.