The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2024

Filed:

Apr. 26, 2021
Applicant:

Global Communication Semiconductors, Llc., Torrance, CA (US);

Inventors:

Liping D. Hou, Torrance, CA (US);

Kun-Mao Pan, Harbor City, CA (US);

Shing-Kuo Wang, Torrance, CA (US);

Yuefei Yang, Torrance, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H 9/08 (2006.01); H03H 3/02 (2006.01); H03H 9/17 (2006.01);
U.S. Cl.
CPC ...
H03H 9/08 (2013.01); H03H 3/02 (2013.01); H03H 9/173 (2013.01); H03H 2003/021 (2013.01);
Abstract

Devices and processes for preparing devices are described for a bulk acoustic wave resonator. A stack formed over a substrate includes a piezoelectric film element, a first (e.g., bottom) electrode coupled to a first side of the piezoelectric film element, and a second (e.g., top) electrode that is coupled to a second side of the piezoelectric film element. A cavity is positioned between the stack and the substrate. The resonator includes one or more planarizing layers, including a first planarizing layer around the cavity, wherein a first portion of the first electrode is adjacent the cavity and a second portion of the first electrode is adjacent the first planarizing layer. The resonator optionally includes an air reflector around the perimeter of the piezoelectric film element. The stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode.


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