The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2024

Filed:

Oct. 15, 2020
Applicant:

Global Communication Semiconductors, Llc, Torrance, CA (US);

Inventors:

Shing-Kuo Wang, Torrance, CA (US);

Liping D. Hou, Torrance, CA (US);

Kun-Mao Pan, Harbor City, CA (US);

Andy Chien-Hsiang Chen, Cypress, CA (US);

Robert B. Stokes, Rancho Palos Verdes, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H10N 30/85 (2023.01); H10N 30/00 (2023.01);
U.S. Cl.
CPC ...
H03H 9/02015 (2013.01); H03H 9/0211 (2013.01); H03H 9/02102 (2013.01); H03H 9/02118 (2013.01); H03H 9/131 (2013.01); H03H 9/17 (2013.01); H03H 9/173 (2013.01); H10N 30/1051 (2023.02); H10N 30/85 (2023.02);
Abstract

A bulk acoustic wave (BAW) resonator includes a substrate, a stack over the substrate and including a piezoelectric layer disposed between two electrode layers, and one or more edge frames. The one or more edge frames can be a raised metal frame extending parallel to a periphery of an active region of the stack and has one or more slanted cuts such that the edge frame does not form a closed loop and loss of acoustic energy in the active region through the one or more cuts is reduced, minimized or prevented. Alternatively or additionally, the one or more edge frames include a recessed edge frame in the form of a trench in the piezoelectric layer extending parallel to a boundary of the active region, and may further include a second edge frame formed on the first electrode and embedded in the piezoelectric layer.


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