The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Oct. 03, 2017
Globalfoundries Inc., Grand Cayman, KY;
Yiheng Xu, Clifton Park, NY (US);
Haiting Wang, Clifton Park, NY (US);
Wei Zhao, Fort Lee, NJ (US);
Todd B. Abrams, Round Lake, NY (US);
Jiehui Shu, Clifton Park, NY (US);
Jinping Liu, Ballston Lake, NY (US);
Scott Beasor, Greenwich, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A hardmask is patterned on a first material to leave hardmask elements. The first material is patterned into fins through the hardmask. A layer of silicon is formed on the hardmask elements and the fins in processing that forms the layer of silicon thicker on the hardmask elements relative to the fins. An isolation material is formed on the layer of silicon to leave the isolation material filling spaces between the fins. The isolation material and the layer of silicon are annealed to consume relatively thinner portions of the layer of silicon and leave the layer of silicon on the hardmask elements as silicon elements. A chemical mechanical polishing (CMP) is performed on the isolation material to make the isolation material planar with the silicon elements. A first etching agent removes the silicon elements on the hardmask elements, and a second chemical agent removes the hardmask elements.